The technology part of the presentation describes recent progress in our CNT non-volatile memory. We have also been working on CNT field effect transistors (CNT-FETs) that can be integrated into a standard semiconductor material stack. CNT-FETs are interesting on their own for digital and analog transistor circuits for classic Space Computing applications, but beyond that, we are working on integrating our CNT non-volatile memory with CNT-FETs for the word line transistors. This combination will let us stack multiple layers of memory elements on-wafer in three dimensions, enabling higher memory capacities for a given chip size. We believe this technology will have very interesting benefits for Space Computing applications.