TiO₂ memristor devices have been extensively tested for radiation hardness. The devices appear to be radiation tolerant to both ionizing radiation and displacement damage. Ions used for irradiation include alpha particles, neutrons, heavy ions and protons. Devices showed changes in resistance with high fluences of both alpha particles and protons. However, the post-radiation devices could be cycled between the on and off states, similar to pre-radiation. Modeling of various irradiations show that much of the radiation passes through the thin film samples without energy deposition.